σ-π molecular dielectric multilayers for low-voltage organic thin-film transistors

Yoon et al. 10.1073/pnas.0501027102.

Supporting Information

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Supporting Materials
Supporting Figure 6
Supporting Figure 7
Supporting Figure 8
Supporting Figure 9

Supporting Materials

The bis-trichlorosilane-functionalized alkyl chain [Cl₃Si(CH₂)₈SiCl₃] and octachlorotrisiloxane reagents were purchased from Gelest (Morrisville, PA), and the stilbazonium salt precursor was prepared as described in ref. 1. Native oxide coated highly n-doped silicon (100) wafers were purchased from Montco Silicon Tech (Spring City, PA). Tin-doped indium oxide (ITO)-coated glass substrates (20 W /□; 20-30-Å rms roughness) were purchased from Donnelly (Holland, WI) and cleaned according to procedures described in ref. 1. Semiconductor 1 was synthesized and purified as described in ref. 2, and new compound 3 was synthesized and characterized by straightforward methodology (3). Semiconductors 2 and 4 were purchased from Aldrich and purified by gradient vacuum sublimation before use. Semiconductor 5 was previously synthesized in our laboratory (4).

1. Zhu, P., van der Boom, M. E., Kang, H., Evmenenko, G., Dutta, P. & Marks, T. J. (2002) Chem. Mater. 14, 4982–4989.

2. Garnier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S. & Alnot, P. (1993) J. Am. Chem. Soc. 115, 8716–8721.

3. Yoon, M.-H., DiBeneditto, S. A., Facchetti, A. & Marks, T. J. (2005) J. Am. Chem. Soc. 127, 1348–1349.

4. Mushrush, M., Facchetti, A., Lefenfeld, M., Katz, H. E. & Marks, T. J. (2003) J. Am. Chem. Soc. 125, 9414–9423.

Supporting Figure 6

Fig. 6. Optical absorption spectrum of nanodielectric II on a tin-doped indium oxide (ITO)--glass substrate. a.u., arbitrary units.

Supporting Figure 7

Fig. 7. C--f characteristics of ITO/(I–III)/Au metal–insulator–semiconductor (MIS) devices as a function of frequency.

Supporting Figure 8

Fig. 8. (A) Current density vs. voltage plots for n⁺-Si-native oxide and ITO-type III–Au structures. (B) Transfer plot for 1 on ITO-type III-based organic thin-firm transistor (OTFT) device.

Supporting Figure 9

Fig. 9. (A) Picture of flexible ITO-based thin-firm transistor (TFT). Note that the roughness of this ITO is >5 nm. (B) TFT output characteristics for semiconductor 1 as a function of V_G using nanodielectric-based type III grown on Mylar--ITO substrates.