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PHYSICS
Organic light-emitting diodes formed by soft contact lamination


*Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974; and
Department of Materials Science and Engineering and Department of Chemistry, Beckman Institute and Seitz Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, IL 61801
Edited by Tobin J. Marks, Northwestern University, Evanston, IL, and approved October 17, 2003 (received for review July 5, 2003)
| Abstract |
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150 nm. Facile large area nano-patterning of the flexible electrode and the ability to modify the physical and chemical properties of the top electrode are both important features that the ScL technique brings to the area of high-performance, f lexible nanooptoelectronic devices.
Fig. 1 schematically illustrates an OLED fabricated by ScL. The ScL device consists of two parts: a transparent elastomeric element coated with a thin metal film and a transparent substrate that supports an electrode and a film of an electroluminescent organic. When these two components are brought together, van der Waals interactions pull them into intimate contact to complete the device. This soft, laminated contact is robust (i.e., the device can be turned upside down without the pieces coming apart), reversible (i.e., the components can be peeled apart with no visual damage to either) and can be established at room temperature without any applied pressure. The elastomer that we use for the experiments is PDMS (Sylgard 184, Dow-Corning) cast and cured (60°C for 3 h) against the flat surface of a silicon wafer. Exposing the PDMS (typical thickness between 1 and 5 mm) to an oxygen plasma (
2 s, 30 standard cm3/min, 30 mT, 100 V; Plasma-Therm reactive ion etcher) followed by electron beam evaporation at
5 x 107 torr (1 torr = 133 Pa) of
1-nm Ti (adhesion promoter; 0.3 nm/s) and 20- to 60-nm Au (1 nm/s) generates thin electrically continuous metal films that are strongly bonded to the PDMS. [We use Au in these studies because, unlike the more typical materials such as Ca and Al, it does not chemically interact with most organics and does not form a surface oxide. These features greatly simplify the interpretation of device characteristics. Certain other metals can be used (for example, Pd can be evaporated on top of PDMS with the same procedures used for Au, and Al and Ag can be evaporated on top of Au/PDMS).] Evaporating through a shadow mask placed near the PDMS enables coarsely patterned OLEDs. Micrometer and nanoscale devices can be achieved by using various soft lithographic methods. Spin casting forms a uniform film of the electroluminescent material on a thin (
100 nm) layer of ITO (
15
per square) on a glass slide (0.4 mm thick). When the bottom and top pieces are brought together, van der Waals forces pull the electrodes into intimate contact with the EL layer at room temperature, without application of external pressure. Typically this contact initiates on one side of the structure; a wetting front then progresses naturally across the sample until the entire surface is in contact. We typically observed, using an optical microscope, perfect contact (i.e., absence of any air gaps) over large areas (see Fig. 1c). In all cases, the metal-coated PDMS was either used to build devices immediately after evaporation or after removal from brief storage in a dry nitrogen environment.
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We first compare the performance of OLEDs built by ScL and by direct evaporation of Au electrodes (conventional devices) onto thin (
65 nm) films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV; MW 90000, H. W. Sands, Jupiter, FL) spin cast onto ITO/glass. The Au was evaporated on MEH-PPV at a relatively high rate of 10 Å/s by electron beam with a long distance (
30 cm) between the metal source and the sample, and with a rotating sample mount (5). The current and light output of these devices were measured while biasing the voltage positively to either the ITO or the Au. Qualitatively, the emission from both types of devices is spatially uniform as viewed by eye or through a microscope. Fig. 2a shows typical currentvoltage behavior. The similar currentvoltage characteristics, together with the uniform emission, suggest that the two types of devices have similar electrical properties. Fig. 2b displays typical external EL quantum efficiencies (11) as a function of current density. Because the work function of ITO [
4.7 eV (1 eV = 1.602 x 1019 J)] is smaller than that of Au (
5.1 eV), the efficiencies are higher when Au is biased positively than when ITO is biased positively because of enhanced electron injection. In contrast to the similar electrical properties, the ScL devices have efficiencies that are larger [maximum quantum efficiency: 0.015% ph/el for ITO-positive direction and 0.056% ph/el for Au-positive direction] than the conventional ones (maximum quantum efficiency: 0.0015% ph/el for ITO-positive direction and 0.003% ph/el for Au-positive direction).
The quantum efficiencies of ScL devices with Au electrodes in both bias directions are also comparable to thermally evaporated ITO/MEH-PPV/Al devices with a lower work function metal (Al) that we fabricated (maximum quantum efficiency: 0.01% ph/el for ITO-positive direction and 0.04% ph/el for Al-positive direction) and previous reported values on similar Al devices (12, 13). Because the MEH-PPV is primarily a hole transporting material, most of the excitons form near the Au in both types of devices when the ITO is biased positively. Nonradiative energy transfer from these excitons to metal (i.e., luminescence quenching by metal) represents one mechanism that reduces the efficiency (14). This effect occurs in both conventional and ScL devices. The lower efficiency in the conventional devices suggests the presence of additional quenching mechanisms. These could arise from various pathways associated with metal indiffusion, changes in morphology, bond disruption, and other effects caused by deposition of the Au. The large difference in efficiency is also present when the Au is positively biased. Although most excitons in this case are generated near the ITO, they can readily diffuse toward the Au side of the device during operation because their characteristic diffusion length is
20 nm (15), which represents a substantial fraction of the thickness of the MEH-PPV. In addition, the peak recombination zone moves toward the Au electrode because of the enhancement of charge-carrier mobility in increasing electric fields (16). As a result, the excitons can be quenched through the same pathways, independent of the direction of the bias.
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To provide additional insight into the differences in quantum efficiency between these two types of devices, we measured the PL spectra from test structures that consisted of
10-nm-thick MEH-PPV films spin cast onto glass slides. Half of the film in each case was covered by a layer of Au (20 nm thick) formed either by evaporation (Fig. 3a) or by ScL (Fig. 3b). Laminating a bare piece of PDMS against the evaporated sample makes it similar in construction to the ScL structure. Data were collected in the same reflection mode geometry for both samples. Fig. 3a Inset shows that the PL intensity in the evaporated structure is more than two orders of magnitude lower in the region coated with Au. More significantly, this reduced PL has a spectrum that is blue-shifted relative to MEH-PPV (Fig. 3a), suggesting disruption of the
conjugation of the polymer in the part of the sample that was evaporated with Au.¶ Fig. 3b shows, in contrast, that the ScL structures have PL spectra that are similar to those obtained from regions of the MEH-PPV that are not coated with Au. Furthermore, the PL intensity is only one order of magnitude smaller on the side that has laminated Au (Fig. 3b Inset). This decrease likely arises from simple metal quenching effects at the interface. It is reversible: removing the ScL electrode returns the PL intensity and spectrum to those characteristics of portions of the MEH-PPV that were never in contact with Au. From these results and the EL measurements, we conclude that detrimental effects at the interface of the evaporated device, which may include disruption of conjugation in the polymer chains and metal in-diffusion, lead to quenching that can reduce the device efficiency compared to those formed by ScL. Other reports describe quenching induced by interaction with secondary electrons in electron beam evaporators; these effects likely play a role here. It is also possible that different sensitivities to partial pinhole defects of ScL and evaporated electrodes contribute to different apparent device efficiencies.
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Although the absolute efficiencies of even the ScL devices are relatively low when Au is used, the performance can be improved through various strategies. For example, blending organic salts [tetra-n-butylammonium tetrafluoroborate (TBABF4)] into the emitting polymer (MEH-PPV:TBABF4 = 0.865:0.135) produces field-induced dipoles that enhance hole and electron injections from both electrodes (1719). For a single-layer ScL device made of 190-nm film of the MEH-PPV and TBABF4 blend with 60-nm Au/PDMS, a maximum external efficiency of 2.5% ph/el was measured at 3.4 V. Pure MEH-PPV ScL devices with 60-nm Au/PDMS can also be improved by depositing a thin (
10 nm) electron injecting layer [the blend of poly(ethylene oxide) and TBABF4] onto MEH-PPV (2, 1719). With this strategy, we obtained maximum external quantum efficiency of 0.53% ph/el at 6.8 V for ScL devices. ScL devices might also be improved by employing other proven methods used in conventional OLED devices (2). For example, low work function metals could be used in place of Au. This strategy, however, requires careful experimental control to avoid surface oxides that can form before or during lamination.
In addition to high efficiencies and noninvasive, reversible electrical contacts, ScL provides unique opportunities for using soft lithography to make patterned OLEDs with high resolution, in ways that might complement other reported techniques (2023). Here we demonstrate three different approaches, using a polyfluorene derivative (24) as the electroluminescent layer because of its better stability than MEH-PPV: (i) the PDMS element itself can provide surface relief to pattern the contacts (Fig. 4a) (8, 9, 25), (ii) the Au on the PDMS can be chemically modified by microcontact printing patterns of insulating thiols (21, ||) as barriers to charge injection (Fig. 4b), and (iii) photo-lithography with conformable phase masks (26) and etching can be used to pattern directly the Au on the PDMS with nanometer resolution (Fig. 4c). Each of these approaches achieves high contrast patterned emission by modifying the top electrode before lamination. The spatial homogeneity of the emission in the patterned areas is, in all cases, comparable to that of unpatterned devices formed by evaporation. We observed, however, much slower growth in the dark spots in ScL devices than evaporated ones. The nanopatterned OLEDs (Fig. 4c) have
150-nm-wide Au line electrodes but show emission profiles of
600-nm linewidth, which is comparable to the resolution of the optical imaging system. The efficiency of these nanodevices is nearly as good (0.23% ph/el with 20-nm Au) as unpatterned ones (0.65% ph/el). Ultrasmall, flexible OLEDs such as these could potentially be useful, for example, as conformable light sources for subwavelength storage or lithography systems, or nanoscale optoelectronics. These and other more conventional applications, as well as fundamental investigations of electrode/organic semiconductor interfaces, represent some of the many promising areas of use for ScL.
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In summary, organic/polymer EL devices formed by ScL exhibit homogeneous physical contacts and improved quantum efficiency compared to conventional devices. This latter feature may result, at least partly, because ScL avoids the detrimental effects caused by metal evaporation that give rise to nonradiative decay channels for excitons. In addition to excellent performance, micro- and nanoscale devices based on chemical or physical modification of the top electrodes before lamination demonstrates the power of ScL for fabricating high-resolution organic optoelectronic devices.
| Acknowledgements |
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| Footnotes |
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Abbreviations: EL, electroluminescence; ITO, indium tin oxide; MEH-PPV, poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene]; OLED, organic light-emitting diode; PDMS, poly(dimethylsiloxane); ph/el, photons per electron; PL, photoluminescence; ScL, soft contact lamination; TBABF4, tetra-n-butylammonium tetrafluoroborate.
For comparison, a thermally evaporated device of the same structure with Au electrode showed 5.9 x 105% quantum efficiency for ITO-positive direction and 1.6 x 104% quantum efficiency for Au-positive direction. ![]()
¶ The degree of quenching rates and blue shift in spectra because of bond disruption depends on the evporation method (electron beam or thermal), the evaporation rate, and the molecular weight and chemical structures of the material, etc. ![]()
|| We put high-concentration (5 mM) octadecanethiol solution on the patterned stamp to generate high-contrast patterned images. ![]()
To whom correspondence should be addressed. E-mail: taew.lee{at}samsung.com or jrogers{at}uiuc.edu.
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