Previous Article |
Table of Contents
| Next Article
PHYSICAL SCIENCES / CHEMISTRY
p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells
Department of Chemistry, Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208
Contributed by Tobin J. Marks, December 21, 2007 (received for review September 12, 2007)
To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.
interface | photovoltaic | solar energy
The authors declare no conflict of interest.
This article contains supporting information online at www.pnas.org/cgi/content/full/0711990105/DC1.
*To whom correspondence may be addressed. E-mail: r-chang{at}northwestern.edu or t-marks{at}northwestern.edu
© 2008 by The National Academy of Sciences of the USA
![]()
CiteULike
Complore
Connotea
Del.icio.us
Digg What's this?
Related articles in PNAS: