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Research Article

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Sang-Hoon Bae, Xiaodong Zhou, Seyoung Kim, Yun Seog Lee, Samuel S. Cruz, Yunjo Kim, James B. Hannon, Yang Yang, Devendra K. Sadana, Frances M. Ross, Hongsik Park, and Jeehwan Kim
PNAS first published April 3, 2017; https://doi.org/10.1073/pnas.1620176114
Sang-Hoon Bae
aDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
bResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139;
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
dDepartment of Materials Science and Engineering, University of California, Los Angeles, CA 90095;
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Xiaodong Zhou
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Seyoung Kim
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Yun Seog Lee
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Samuel S. Cruz
aDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
bResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139;
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Yunjo Kim
aDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
bResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139;
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James B. Hannon
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Yang Yang
dDepartment of Materials Science and Engineering, University of California, Los Angeles, CA 90095;
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Devendra K. Sadana
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Frances M. Ross
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
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Hongsik Park
eSchool of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea;
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Jeehwan Kim
aDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
bResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139;
cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
fDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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  • For correspondence: jeehwan@mit.edu
  1. Edited by David Goldhaber-Gordon, Stanford University, Stanford, CA, and accepted by Editorial Board Member Evelyn L. Hu March 1, 2017 (received for review December 14, 2016)

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Online Impact

 

Article Information

201620176
DOI: 
https://doi.org/10.1073/pnas.1620176114
PubMed: 
28373575

Published By: 
National Academy of Sciences
Print ISSN: 
0027-8424
Online ISSN: 
1091-6490
History: 
  • Published April 3, 2017.


Author Information

  1. Sang-Hoon Baea,b,c,d,
  2. Xiaodong Zhouc,
  3. Seyoung Kimc,
  4. Yun Seog Leec,
  5. Samuel S. Cruza,b,
  6. Yunjo Kima,b,
  7. James B. Hannonc,
  8. Yang Yangd,
  9. Devendra K. Sadanac,
  10. Frances M. Rossc,
  11. Hongsik Parke, and
  12. Jeehwan Kima,b,c,f,1
  1. aDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
  2. bResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139;
  3. cIBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
  4. dDepartment of Materials Science and Engineering, University of California, Los Angeles, CA 90095;
  5. eSchool of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea;
  6. fDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
  1. Edited by David Goldhaber-Gordon, Stanford University, Stanford, CA, and accepted by Editorial Board Member Evelyn L. Hu March 1, 2017 (received for review December 14, 2016)

Footnotes

  • ↵1To whom correspondence should be addressed. Email: jeehwan{at}mit.edu.
  • Author contributions: H.P. and J.K. designed research; S.-H.B., X.Z., S.K., Y.S.L., and J.K. performed research; S.-H.B., X.Z., S.K., Y.S.L., S.S.C., Y.K., J.B.H., Y.Y., D.K.S., F.M.R., H.P., and J.K. analyzed data; and S.-H.B., X.Z., S.K., S.S.C., Y.K., H.P., and J.K. wrote the paper.

  • The authors declare no conflict of interest.

  • This article is a PNAS Direct Submission. D.G. is a Guest Editor invited by the Editorial Board.

  • This article contains supporting information online at www.pnas.org/lookup/suppl/doi:10.1073/pnas.1620176114/-/DCSupplemental.

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Article usage

Article usage: March 2017 to March 2021

AbstractFullPdf
Mar 2017111
Apr 20176357139398
May 2017230031356
Jun 201710131647
Jul 20175861453
Aug 20172811644
Sep 20172841649
Oct 20172123845
Nov 20172061940
Dec 20171533041
Total 2017113933201074
Jan 20181743334
Feb 2018787042
Mar 20181049156
Apr 201810910573
May 20181048654
Jun 20181009144
Jul 2018898247
Aug 201813413236
Sep 201810010153
Oct 20182213552
Nov 2018812444
Dec 201849938
Total 201810261149573
Jan 201959825
Feb 2019289326
Mar 20192410442
Apr 20192210835
May 2019216438
Jun 2019123119
Jul 2019116044
Aug 2019195347
Sep 20191610228
Oct 2019187022
Nov 2019106832
Dec 2019196329
Total 2019205914387
Jan 2020186417
Feb 2020196827
Mar 202094621
Apr 20202810052
May 202096541
Jun 2020135633
Jul 202075923
Aug 202044511
Sep 2020114318
Oct 2020144623
Nov 2020186027
Dec 2020245344
Total 2020174705337
Jan 2021465940
Feb 20211233821
Mar 2021910
Total 20211789861
Total1297631862432
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Carrier transport mechanism in epitaxial graphene
Sang-Hoon Bae, Xiaodong Zhou, Seyoung Kim, Yun Seog Lee, Samuel S. Cruz, Yunjo Kim, James B. Hannon, Yang Yang, Devendra K. Sadana, Frances M. Ross, Hongsik Park, Jeehwan Kim
Proceedings of the National Academy of Sciences Apr 2017, 201620176; DOI: 10.1073/pnas.1620176114

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Carrier transport mechanism in epitaxial graphene
Sang-Hoon Bae, Xiaodong Zhou, Seyoung Kim, Yun Seog Lee, Samuel S. Cruz, Yunjo Kim, James B. Hannon, Yang Yang, Devendra K. Sadana, Frances M. Ross, Hongsik Park, Jeehwan Kim
Proceedings of the National Academy of Sciences Apr 2017, 201620176; DOI: 10.1073/pnas.1620176114
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